SMB10J series creat by art - low profile package - ideal for automated placement - glass passivated junction - excellent clamping capability - halogen-free according to iec 61249-2-21 molding compound: ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit p pk w p d w t j c t stg c 1. for bidirectional use ca suffix part no. *: optional available part no. version: a1511 SMB10J30a h aec-q101 qualified green compound SMB10J30ahr5g SMB10J30a h r5 g example example p/n part no. suffix packing code packing code suffix description r5 g smb 850 / 7" plastic reel r4 smb 3,000 / 13" paper reel m4 smb 3,000 / 13" plastic reel ordering information part no. suffix packing code packing code suffix (*) package packing taiwan semiconductor 1000w surface mount transient voltage suppressor features - fast response time: typically less than 1.0ps moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec do-214aa (smb) mechanical data case: do-214aa (smb) weight: 0.11 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value peak power dissipation at t a =25c, tp=1ms (note 1) 1000 steady state power dissipation 5 - 55 to +175 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a maximum instantaneous forward voltage at 50 a for unidirectional only v f 3.5 v storage temperature range - 55 to +175 note 1: non-repetitive current pulse per fig. 3 and derated above t a =25c per fig. 2 devices for bipolar applications typical thermal resistance r jl r ja 20 100 c/w operating junction temperature range
creat by art (t a =25c unless otherwise noted) version: a1511 SMB10J series taiwan semiconductor ratings and characteristics curves 0 25 50 75 100 125 0 25 50 75 100 125 150 175 200 peak pulse power(p pp ) or current (i pp ) a derating in percentage (%) t a , ambient temperature ( c) fig.2 pulse derating curve 10 100 1 10 100 ifsm, peak forward surge current (a) number of cycles at 60 hz fig. 4 maximum non-repetitive forward surge current unidirectional only 8.3ms single half sine wave 0 20 40 60 80 100 120 140 00.511.522.533.54 peak pulse current (%) t, time ms fig. 3 clamping power pulse waveform td peak value i ppm tr=10 s half value-i ppm /2 10/1000 s, waveform as defined by r.e.a. pulse width(td) is defined as the point where the peak current decays to 50% of i ppm 1 10 100 1 10 100 1000 p ppm , peak pulse power, kw tp, pulse width, ( s) fig. 1 peak pulse power rating curve non-reperirive pulse waveform shown in fig.3
creat by art test stand-off maximum maximum maximum current voltage reverse leakage peak pulse clamping voltage i t v wm @ v wm current i ppm @ i ppm uni bi uni bi min max (ma) (v) i r ( a) (a) v c (v) SMB10J9.0a SMB10J9.0ca 1kv kvc 10.0 11.1 1 9 10 64.9 15.4 SMB10J10a SMB10J10ca 1kx kxc 11.1 12.3 1 10 8 58.8 17.0 SMB10J11a SMB10J11ca 1kz kzc 12.2 13.5 1 11 5 54.9 18.2 SMB10J12a SMB10J12ca 1le lec 13.3 14.7 1 12 5 50.3 19.9 SMB10J13a SMB10J13ca 1lg lgc 14.4 15.9 1 13 5 46.5 21.5 SMB10J14a SMB10J14ca 1lk lkc 15.6 17.2 1 14 5 43.1 23.2 SMB10J15a SMB10J15ca 1lm lmc 16.7 18.5 1 15 1 41.0 24.4 SMB10J16a SMB10J16ca 1lp lpc 17.8 19.7 1 16 1 38.5 26.0 SMB10J17a SMB10J17ca 1lr lrc 18.9 20.9 1 17 1 36.2 27.6 SMB10J18a SMB10J18ca 1lt ltc 20.0 22.1 1 18 1 34.2 29.2 SMB10J20a SMB10J20ca 1lv lvc 22.2 24.5 1 20 1 30.9 32.4 SMB10J22a SMB10J22ca 1lx lxc 24.4 26.9 1 22 1 28.2 35.5 SMB10J24a SMB10J24ca 1lz lzc 26.7 29.5 1 24 1 25.7 38.9 SMB10J26a SMB10J26ca 1me mec 28.9 31.9 1 26 1 23.8 42.1 SMB10J28a SMB10J28ca 1mg mgc 31.1 34.4 1 28 1 22.0 45.4 SMB10J30a SMB10J30ca 1mk mkc 33.3 36.8 1 30 1 20.7 48.4 SMB10J33a SMB10J33ca 1mm mmc 36.7 40.6 1 33 1 18.8 53.3 SMB10J36a SMB10J36ca 1mp mpc 40.0 44.2 1 36 1 17.2 58.1 SMB10J40a SMB10J40ca 1mr mrc 44.4 49.1 1 40 1 15.5 64.5 version: a1511 breakdown voltage v br (v) SMB10J series taiwan semiconductor device device marking code
min max min max a 1.95 2.10 0.077 0.083 b 4.25 4.75 0.167 0.187 c 3.48 3.73 0.137 0.147 d 1.99 2.61 0.078 0.103 e 0.90 1.41 0.035 0.056 f 5.10 5.30 0.201 0.209 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = specific device code g = green compound yw = date code f = factory code note: cathode band for uni-directional products only version: a1511 2.3 0.091 SMB10J series taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 2.5 0.098 c 4.3 0.169 suggested pad layout symbol unit (mm) unit (inch) a marking diagram do-214aa (smb) d 1.8 0.071 e 6.8 0.268 b
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. version: a1511 SMB10J series taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
|
